Semi-Power Deviceパワーデバイス
GaN
Everlight Gallium nitride (GaN) Power Devices offer incredible advantages in terms of lightning-fast switching speeds and compact integration. These state-of-the-art GaN power devices from Everlight are the perfect replacement for medium to low voltage silicon-based MOSFETs in high-frequency applications such as consumer electronics and new energy vehicles.
The Everlight GaN Power Diode series covers a wide range of resistances, spanning from 100 mOhm to 300 mOhm. This ensures exceptional conductivity and efficiency for your power applications. Packaged in the compact and reliable DFN format, these power diodes are designed to seamlessly fit into your existing systems.
Digital ambient light sensor ALS-DPDIC17-78C-L749 application note V1.0
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DFN 5x6
DFN 8x8
產品特性
- 具備耐高溫、耐高壓,有良好的導電性、導熱性
- 在高電壓情況下不易發熱,能有效縮短充電時間
- 擁有更高的電子密度和電子速度,切換速度快、體積更小、重量更輕
- 電阻範圍:100 mOhm~300 mOhm
產品應用
- 變壓器、充電器
- 需要較大電壓的筆記型電腦、平板
- LED照明、5G基地台
- 適合高頻率、高效率的電子產品
更多資訊
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